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RI82 flat (chip-style) high-voltage resistors

扁平陶瓷体,0.25 W 至 100 W,最高 60 kV

0.25–100 W · 最高 4–60 kV

RI82 扁平型 — 氧化铝基体上的锯齿形电阻体

扁平体高压电阻,96% 氧化铝基体 + 锯齿形玻璃釉电阻体。扁平外形压低板高,大表面积高效散热,以远小于同规格圆管电阻的体积覆盖 0.25 W 至 100 W。体长 10 mm 至 182 mm,耐压最高 60 kV,引线间距按型号指定,可直接落入现有封装位。

材料

96% Al<sub>2</sub>O<sub>3</sub> alumina ceramic
Glass-glaze resistance film
Tinned copper
Resin
Air (see notes — rating improves substantially when oil-immersed or resin-potted)

封装:树脂。

额定值说明

  • 同时给出额定电压与最大工作电压时,取两者中较低者。
  • 脉冲峰值功率须低于额定功率的 100 倍。

规格 — RI82 flat

38 种外形尺寸。数值为制造商数据,完整复录。

型号功率 (W)H (mm)L (mm)T (mm)Pitch P (mm)Lead L (mm)Lead &Oslash; (mm)阻值范围耐压 (Vr)公差温度系数
RI82-03090.2541028120.51K–100G5,000F G J K±5–±200
RI82-03120.25413210120.51K–100G6,000F G J K±5–±200
RI82-03140.25415212.6120.51K–100G6,000F G J K±5–±200
RI82-04070.255.5826120.51K–100G4,000F G J K±5–±200
RI82-03170.5418215150.51K–100G7,000F G J K±5–±200
RI82-03190.5420217.8150.51K–100G7,000F G J K±5–±200
RI82-03220.5423220150.51K–100G8,000F G J K±5–±200
RI82-05100.571128150.51K–100G5,000F G J K±5–±200
RI82-05150.5716213150.51K–100G6,000F G J K±5–±200
RI82-06090.581027.62150.51K–100G4,000F G J K±5–±200
RI82-04150.5616213.5150.51K–100G6,000F G J K±5–±200
RI82-051817192.516150.51K–100G7,000F G J K±5–±200
RI82-052217232.520.32150.61K–100G10,000F G J K±5–±200
RI82-052517262.523150.61K–100G12,000F G J K±5–±200
RI82-05401.57412.538150.61K–100G18,000F G J K±5–±200
RI82-06281.58292.526150.61K–100G12,000F G J K±5–±200
RI82-07261.59272.522.86180.61K–100G12,000F G J K±5–±200
RI82-08251.510262.522.86180.61K–100G12,000F G J K±5–±200
RI82-1020212212.517180.61K–100G8,000F G J K±5–±200
RI82-0830210312.527.94180.61K–100G15,000F G J K±5–±200
RI82-1025212262.523180.61K–100G12,000F G J K±5–±200
RI82-0833210342.530180.61K–100G15,000F G J K±5–±200
RI82-0840210412.537180.61K–100G18,000F G J K±5–±200
RI82-055037512.547180.61K–100G20,000F G J K±5–±200
RI82-0852310532.549.5180.61K–100G20,000F G J K±5–±200
RI82-0930311312.527.94180.61K–100G15,000F G J K±5–±200
RI82-1030312312.527.94220.61K–100G15,000F G J K±5–±200
RI82-1538517392.535220.61K–100G18,000F G J K±5–±200
RI82-1542517432.538220.61K–100G20,000F G J K±5–±200
RI82-1050512512.547220.61K–100G20,000F G J K±5–±200
RI82-1550817512.547220.61K–100G20,000F G J K±5–±200
RI82-20751022762.572220.61K–100G25,000F G J K±5–±200
RI82-20901522922.587220.61K–100G30,000F G J K±5–±200
RI82-2510020271022.597220.61K–100G30,000F G J K±5–±200
RI82-3010025321022.597220.61K–100G30,000F G J K±5–±200
RI82-3512030371222.5117220.61K–100G35,000F G J K±5–±200
RI82-4015050421522.5147220.61K–100G40,000F G J K±5–±200
RI82-60180100621822.5177220.61K–100G60,000F G J K±5–±200

标准型号命名示例:RI82FA0510T。公差代码 F = 1%,G = 2%,J = 5%,K = 10%。

性能试验

测试项目、要求与方法取自制造商规格。

测试项目性能要求试验方法
可焊性Infiltration area ≥ 95%Solder bath 235 ± 5 °C, 2 s
引出端强度ΔR ≤ ±(1%R + 0.05Ω)10 N, 30 s
恒定湿热ΔR ≤ ±(5%R + 0.1Ω)40 ± 2 °C, 93 ± 3%RH, 1000 h
振动ΔR ≤ ±(1%R + 0.05Ω)10–500 Hz, 0.75 mm or 98 m/s², 6 h
耐焊接热ΔR ≤ ±(1%R + 0.05Ω)260 ± 5 °C, 10 ± 1 s
快速温度变化ΔR ≤ ±(1%R + 0.05Ω)−55 °C 30 min / 125 °C 30 min, 5 cycles
70 ℃ 耐久性ΔR ≤ ±(5%R + 0.1Ω)70 ± 2 °C, rated power, 1000 h
短时过载ΔR ≤ ±(1%R + 0.05Ω)1.5 VR, 5 s

数据表完整复制自制造商规格。XYTH Electronics 作为独立分销商供应这些系列;所有商标仅用于标识。

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